Investigation of the structure of (p)3C-SiC-(n)6H-SiC heterojunctions
- 1 December 2001
- journal article
- Published by Pleiades Publishing Ltd in Technical Physics Letters
- Vol. 27 (12) , 1052-1054
- https://doi.org/10.1134/1.1432347
Abstract
The structure of (p)3C-SiC-(n)6H-SiC epitaxial structures obtained by sublimation epitaxy in vacuum on 6H-SiC substrates was studied by methods of X-ray topography, X-ray diffraction, and transmissionKeywords
This publication has 3 references indexed in Scilit:
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- New results in sublimation growth of the SiC epilayersMaterials Science and Engineering: B, 1999
- Polytypism and Properties of Silicon CarbidePhysica Status Solidi (b), 1997