Temperature Dependence of the Phonons of Bulk AlN
- 1 July 2000
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 39 (7B) , L710-712
- https://doi.org/10.1143/jjap.39.l710
Abstract
Micro-Raman scattering measurements were performed on bulk wurtzite AlN crystals over a temperature range from 10 K to 1275 K. The temperature dependence of the frequency of the AlN phonons follows an empirical relationship previously introduced for diamond. A temperature-induced frequency shift of the E2phonon of -(2.22±0.02)×10-2cm-1/K was determined for high temperatures, which is similar to values reported for bulk GaN. The results provide the basis for the non-invasive monitoring of the temperature of (Al,Ga)N by Raman scattering.Keywords
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