Preparation of clean reconstructed InAs(001) surfaces using HCl/isopropanol wet treatments

16 June 2003

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 82 (24) , 4280-4282
https://doi.org/10.1063/1.1583851

Abstract

A simple treatment method using HCl/isopropanol solutions is given for preparation of high-quality InAs(001) surfaces. The surface structure and chemistry were characterized using low-energy electron diffraction and photoemissionspectroscopy as a function of UHV temperature. The treatment removes the natural oxide and leaves on the surface a physisorbed overlayer containing arsenic and small amounts of InCl x . Annealing at 330 ° C induces desorption of this overlayer and reveals a clean arsenic-rich (2×4)/c(2×8) surface. The indium-rich (4×2)/c(8×2) reconstruction is obtained upon further annealing to 410 ° C .

Keywords

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