Microfour-point probe for studying electronic transport through surface states
- 4 December 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (23) , 3782-3784
- https://doi.org/10.1063/1.1329871
Abstract
Microfour-point probes integrated on silicon chips have been fabricated with probe spacings in the range 4–60 μm. They provide a simple robust device for electrical transport measurements at surfaces, bridging the gap between conventional macroscopic four-point probes and scanning tunneling microscopy. Measurements on Si(111) surfaces in ultrahigh vacuum reveal that the Si(111)–√3×√3–Ag structure induced by a monolayer of Ag atoms has a four-point resistance two orders of magnitude lower than that of the Si(111)–7×7 clean surface. We attribute this remarkable difference to direct transport through surface states, which is not observed on the macroscopic scale, presumably due to scattering at atomic steps.Keywords
This publication has 13 references indexed in Scilit:
- Electron standing waves on the Si(111)--Ag surfacePhysical Review B, 1999
- Resistive and Hall weighting functions in three dimensionsReview of Scientific Instruments, 1998
- Electron Conduction through Surface States of the Si(111)-() SurfacePhysical Review Letters, 1998
- Electrical conduction via surface-state bandsSurface Science, 1997
- Self-organization of nanostructures on Si wafers using surface structure controlSurface Science, 1997
- Tight-binding study of interaction time in molecular switchesPhysical Review B, 1996
- Three-dimensional nanostructures by direct laser etching of SiApplied Surface Science, 1995
- Scattering and absorption of surface electron waves in quantum corralsNature, 1994
- Surface electronic structure of Si(111)7×7-Ge and Si(111)5×5-Ge studied with photoemission and inverse photoemissionPhysical Review B, 1987
- Photoemission-Based Photovoltage Probe of Semiconductor Surface and Interface Electronic StructurePhysical Review Letters, 1986