Gap-state measurements on diamond-like carbon films
- 27 June 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (26) , 3637-3639
- https://doi.org/10.1063/1.111955
Abstract
A high frequency capacitance-voltage method is used to measure the electronic gap-state density in diamond-like carbon (DLC) films. The gap-state density is derived from the analysis of high frequency capacitance-voltage characteristics of DLC on crystalline silicon (c-Si) heterojunctions. Near the Fermi level the gap-state density in the DLC thin film is obtained of the order 1016 cm−3 eV−1. Furthermore, the energy-band diagram of a DLC/c-Si heterojunction is evaluated, and the work function of DLC is derived to be 3.6 eV.Keywords
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