A low-beam-divergence cw (GaAl)As double-heterostructure laser grown by low-pressure metallorganic chemical vapor deposition process
- 15 May 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (10) , 795-796
- https://doi.org/10.1063/1.91338
Abstract
We report the operation of a new stripe geometry (GaAl)As double‐heterostructure laser, grown by low‐pressure metallorganic vapor deposition (MO‐CVD). Several points make this MO‐CVD laser very suitable for optical communication: (i) a very low beam divergence in the direction perpendicular to the junction plane, 26 °; (ii) a low pulsed threshold current, 80 mA (stripe geometry: 5×300 μm); (iii) an emission wavelength of 8300 Å (optimum for optical fiber transmission).Keywords
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