Transfer doping effects at the organometallic vapor phase epitaxial AlxGa1−xAs-substrate GaAs interface
- 1 December 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (11) , 1075-1077
- https://doi.org/10.1063/1.93406
Abstract
Electron mobilities in Alx Ga1−xAs (0.1≤x≤0.6) crystals grown by organometallic vapor phase epitaxy on semi‐insulating GaAs:Cr have been measured and analyzed. The mobilities are an order of magnitude higher than theoretical predictions, or those obtained in liquid phase epitaxial Alx Ga1−xAs for x≥0.4. The expected lower mobilities are, however, obtained when measurements are made on the epitaxial layer with the substrate removed. A persistent photoconductivity effect is observed at low temperatures in the layers with substrates. The present results indicate that transfer doping is operative at the epilayer‐substrate heterointerface.Keywords
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