Magnetic and transport characteristics on high Curie temperature ferromagnet of Mn-doped GaN
- 15 May 2002
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 91 (10) , 7911-7913
- https://doi.org/10.1063/1.1451879
Abstract
Mn-doped GaN films on sapphire (0001) substrates were grown by molecular beam epitaxy system using ammonia as nitrogen source. The result of magnetization measurement gives Curie temperature as high as 940 K. The field and temperature dependencies of the magnetization show coexistence of ferromagnetic and paramagnetic phases. In addition, the temperature dependencies of electrical resistance and carrier concentration were measured to investigate the relation between the ferromagnetism and transport property. Below about 10 K, a similar anomalous increase of magnetization and resistance is observed.This publication has 12 references indexed in Scilit:
- Material Design of GaN-Based Ferromagnetic Diluted Magnetic SemiconductorsJapanese Journal of Applied Physics, 2001
- Magnetic and optical properties of GaMnN magnetic semiconductorApplied Physics Letters, 2001
- Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic SemiconductorsScience, 2000
- Transport properties and origin of ferromagnetism in (Ga,Mn)AsPhysical Review B, 1998
- Ferromagnetic Order Induced by Photogenerated Carriers in Magnetic III-V Semiconductor Heterostructures of (In,Mn)As/GaSbPhysical Review Letters, 1997
- Preparation of (In,Mn)As/(Ga,Al)Sb magnetic semiconductor heterostructures and their ferromagnetic characteristicsApplied Physics Letters, 1993
- Magnetotransport properties ofp-type (In,Mn)As diluted magnetic III-V semiconductorsPhysical Review Letters, 1992
- Diluted magnetic III-V semiconductorsPhysical Review Letters, 1989
- Magnetic Tetragonal δ Phase in the Mn–Ga BinaryJournal of Applied Physics, 1965
- Magnetic Study on Mn4N and its Related CompoundsJournal of the Physics Society Japan, 1962