RF Self-Bias Characteristics in Inductively Coupled Plasma
- 1 December 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (12S) , 6076-6079
- https://doi.org/10.1143/jjap.32.6076
Abstract
The plasma characteristics and RF self-bias behavior in inductively coupled plasma were studied. In the absence of magnetic field, a newly developed 1-turn antenna provided more uniform radial distribution of electron density than the spiral antenna with the present relatively small diameter, and uniformity of ±5% with 4.5×1011cm-3was achieved for 12 cmφ at 600 W. The electron density increased linearly with increasing power and did not saturate even at 1 kW input power. Theneof 7×1011cm-3was obtained in Ar at 1 kW power. For such high-density and large-diameter uniform plasma, the RF self-bias voltage was difficult to generate, because the sheath capacitance is too large. An equivalent circuit analysis clarified that the self-bias voltage behaved asVpp4ne-2, whereVppis RF voltage.Keywords
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