splitting for substitutional nitrogen in diamond
- 15 February 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 25 (4) , 2987-2990
- https://doi.org/10.1103/physrevb.25.2987
Abstract
The reason for which extended Hückel theory leads to an inverted order for the and levels of substitutional nitrogen in diamond is discussed in some detail. This situation is shown to originate from an overestimation of the interactions involving "" states, which also leads to a bad description of the conduction band. The reduction of the corresponding parameters leads to a normal ordering which agrees with the local-density calculations. This finding has implications for the existence of Jahn-Teller distortions which are discussed.
Keywords
This publication has 11 references indexed in Scilit:
- Defects in diamond: The unrelaxed vacancy and substitutional nitrogenPhysical Review B, 1981
- Linear-combination-of-atomic-orbitals, self-consistent-field method for the determination of the electronic structure of deep levels in semiconductorsPhysical Review B, 1979
- Comment on the electronic structure of the neutral vacancy in siliconPhysical Review B, 1977
- Tight-binding calculation of the properties of theFcenter and of isoelectronic defects in ZnSPhysical Review B, 1976
- Realistic Tight-Binding Calculations of Surface States of Si and Ge (111)Physical Review Letters, 1974
- Tight-binding calculations of surface states of Si(111)Solid State Communications, 1974
- Semi-empirical LCAO band structuresChemical Physics Letters, 1971
- Linear Combination of Atomic Orbital-Molecular Orbital Treatment of the Deep Defect Level in a Semiconductor: Nitrogen in DiamondPhysical Review Letters, 1970
- Electron-Spin Resonance of Nitrogen Donors in DiamondPhysical Review B, 1959
- Simplified LCAO Method for the Periodic Potential ProblemPhysical Review B, 1954