Transient Structural Relaxation and Melting Temperature of Amorphous Silicon
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Structural information from the Raman spectrum of amorphous siliconPhysical Review B, 1985
- Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantationJournal of Applied Physics, 1985
- Probing the Crystallinity of Evaporated Silicon Films by Raman ScatteringJapanese Journal of Applied Physics, 1985
- Determination of energy barrier for structural relaxation in a-Si and a-Ge by Raman scatteringJournal of Non-Crystalline Solids, 1984
- Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser IrradiationPhysical Review Letters, 1984
- Calculation of phonon density of states for amorphous SiSolid State Communications, 1984
- Order parameters in a-Si systemsSolid State Communications, 1983
- Distortion energy distributions in the random network model of amorphous siliconJournal of Non-Crystalline Solids, 1982
- Investigation of the Melting Temperature of Amorphous SiliconPhysical Review Letters, 1982
- Raman scattering in amorphous Si, Ge and III–V semiconductorsJournal of Non-Crystalline Solids, 1972