Atomic Layer Deposition of CuxS for Solar Energy Conversion
- 3 January 2003
- journal article
- research article
- Published by Wiley in Chemical Vapor Deposition
- Vol. 9 (1) , 15-20
- https://doi.org/10.1002/cvde.200290001
Abstract
Thin films of photoactive Cu1.8S have been deposited by atomic layer deposition (ALD) using Cu(thd)2 and H2S as the precursors. This is a first step in the construction of nanoporous heterojunctions of TiO2/Cu1.8S. The ALD process can be divided into two temperature regimes: below 175 °C, adsorption of the complete Cu(thd)2 molecule occurs, followed by an exchange reaction with H2S yielding CuS; above 175 °C, Cu(thd)2 reduces upon adsorption and slowly decomposes yielding Cu1.8S. The slow decomposition of Cu(thd)2 ensures that smooth and homogeneous films can be obtained up to 280 °C. Flat film solar cell devices of TiO2/Cu1.8S have an open‐circuit voltage of about 200 mV and a short‐circuit current of 30 μA cm–2 at 2.8 kW m–2.Keywords
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