High-energy (56 MeV) oxygen implantation in Si, GaAs, and InP
- 19 November 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (21) , 2253-2255
- https://doi.org/10.1063/1.103906
Abstract
The depth profiles measured by secondary-ion mass spectrometry of 56 MeV oxygen ions implanted into Si, GaAs, and InP are reported. Most of the oxygen is contained within a sharp (full width at half maximum ∼2 μm) non-Gaussian profile centered at ∼31 μm in GaAs, ∼36 μm in InP, and ∼46 μm in Si, with the distribution skewed towards greater depths. The experimental projected ranges appear to be 10% larger than theoretical predictions. Changes in the electrical, optical, and structural properties of the material were measured by transmission electron microscopy (TEM), photoluminescence, and spreading resistance profiling. In the as-implanted Si, the maximum perturbation in the electrical properties occurs at ∼37 μm. No defects are visible by TEM in any of the as-implanted semiconductors for oxygen ion doses of 1.35×1015 cm−2 but the photoluminescent intensity in GaAs and InP is reduced by more than an order of magnitude as a result of this type of implantation.Keywords
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