Dislocation Etch Pits on the Basal Plane of Zinc Crystals
- 1 October 1961
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 32 (10) , 1866-1872
- https://doi.org/10.1063/1.1728254
Abstract
An etch pit technique has been developed that reveals the sites of dislocations which intersect the basal plane surface of zinc crystals. Pits can be formed by either Cl2, HCl, Br2, HBr, or HI dissolved in an appropriate organic solvent. Etchants made with Cl2 or HCl produce hexagonal pyramidal pits whose edges are parallel to 〈101̄0〉 directions; but Br2, BHr, or HI etchants produce hexagonal pits whose edges are parallel to 〈112̄0〉 directions. The technique is useful for observing glide which occurs on nonbasal planes. The dislocation etch pits are seen to form a ``polygonization'' pattern in a crystal that was annealed after deformation. A discussion is presented on the mechanism of etch pit formation and the factors which might determine the shape of the pits.This publication has 14 references indexed in Scilit:
- Etch Pits at Dislocations in CopperJournal of Applied Physics, 1961
- Etch Pits at Dislocations in CopperJournal of Applied Physics, 1960
- Dislocation etch pits in zinc crystalsPhilosophical Magazine, 1959
- Dislocation Etch Pits and Polygonization in High-Purity CopperJournal of Applied Physics, 1959
- Etching patterns in high-purity zincPhilosophical Magazine, 1958
- Dislocation etch pits in silicon ironActa Metallurgica, 1957
- The dynamics of twinning and the interrelation of slip and twinning in zinc crystalsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1957
- LXXXII. Etchpits and dislocations in zinc single cystalsPhilosophical Magazine, 1956
- Dislocations in low-angle boundaries in germaniumActa Metallurgica, 1955
- Observations of Dislocations in Lineage Boundaries in GermaniumPhysical Review B, 1953