Inelastic stopping of medium energy light ions in silicon

1 January 1977

journal article
research article
Published by Taylor & Francis in Radiation Effects

Vol. 32 (3-4) , 169-175
https://doi.org/10.1080/00337577708233071

Abstract

The channeling technique has been used to determine the disorder distributions in silicon bombarded at 45 K with a 10-80 keV H⁺, He⁺, Li⁺, B⁺, C⁺, N⁺, O⁺, and Ne⁺ (v < e^I/h). Comparison of these measured distributions with calculated deposited energy distributions obtained using a Monte-Carlo technique yields quantitative data on the inelastic stopping cross-section. For random incidence we find that the inelastic stopping cross-section for silicon is larger than the Lindhard value and exhibits a Z ₁ dependent variation in qualitative agreement with earlier foil transmission experiments.

Keywords

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