Ultra thin (>3 nm) high quality nitride/oxide stack gate dielectrics fabricated by in-situ rapid thermal processing
- 22 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 463-466
- https://doi.org/10.1109/iedm.1997.650424
Abstract
In this paper, ultra thin (<3 nm) Si/sub 3/N/sub 4//SiO/sub 2/ stack layer with significant lower leakage current, superior boron diffusion barrier properties, and reliability compared with SiO/sub 2/ of identical thickness have been fabricated by in-situ RTP processing. These results demonstrate for the first time that ultra thin LPCVD Si/sub 3/N/sub 4/ can be used as gate dielectrics, contrary to those conclusions made previously on thicker LPCVD Si/sub 3/N/sub 4/.Keywords
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