Highly reliable SiO/sub 2//Si/sub 3/N/sub 4/ stacked dielectric on rapid-thermal-nitrided rugged polysilicon for high-density DRAM's
- 1 July 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (7) , 372-374
- https://doi.org/10.1109/55.192759
Abstract
Experimental results are presented demonstrating that by using rapid thermal nitridation (RTN) of rugged poly-Si surface prior to Si/sub 3/N/sub 4/ deposition, the quality and reliability of reoxidized Si/sub 3/N/sub 4/ dielectric (ON dielectric with an effective oxide thickness of about 35 AA) can be significantly improved over ON films on rugged poly-Si without RTN treatment. These improvements include significantly reduced defect-related dielectric breakdown, 10/sup 3/ * increase in TDDB lifetime, lower leakage current, and suppressed electron-hole trapping and capacitance loss during stress.Keywords
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