New prospects for silicon-based terabit memories and data storage systems
- 1 January 1999
- journal article
- Published by IOP Publishing in Nanotechnology
- Vol. 10 (2) , 159-165
- https://doi.org/10.1088/0957-4484/10/2/310
Abstract
Recent calculations of Fowler-Nordheim tunnelling through `crested' (graded) tunnel barriers have indicated that floating-gate structures using such barriers may combine multi-year retention time with nanosecond recharging time. This effect may be used for the implementation of terabit-scalable, non-volatile random-access memories (NOVORAM) and ultradense electrostatic data storage systems (ESTOR) which may revolutionize digital electronics. In particular, if combined with ultrafast rapid single-flux-quantum (RSFQ) logic circuits, the new memory and storage techniques may lead to the development, within a few years, of teraflops-scale desktop computers.Keywords
This publication has 25 references indexed in Scilit:
- Single-electron charging effects in Nb/Nb oxide-based single-electron transistors at room temperatureApplied Physics Letters, 1998
- Aluminum single-electron nonvolatile floating gate memory cellApplied Physics Letters, 1997
- New floating-gate AlGaAs/GaAs memory devices with graded-gap electron injector and long retention timesIEEE Electron Device Letters, 1988
- Correlated discrete transfer of single electrons in ultrasmall tunnel junctionsIBM Journal of Research and Development, 1988
- Observation of single-electron charging effects in small tunnel junctionsPhysical Review Letters, 1987
- Single-electron transistors: Electrostatic analogs of the DC SQUIDSIEEE Transactions on Magnetics, 1987
- Coulomb blockade of single-electron tunneling, and coherent oscillations in small tunnel junctionsJournal of Low Temperature Physics, 1986
- Planar-doped barriers in GaAs by molecular beam epitaxyElectronics Letters, 1980
- New rectifying semiconductor structure by molecular beam epitaxyApplied Physics Letters, 1980
- Graded or stepped energy band-gap-insulator MIS structures (GI-MIS or SI-MIS)Journal of Applied Physics, 1979