Observation of Hydrogen-Coverage- and Temperature-Dependent Adsorption Kinetics of Disilane on Si(100) during Si Gas-Source Molecular Beam Epitaxy
- 1 May 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (5B) , L625
- https://doi.org/10.1143/jjap.36.l625
Abstract
Precise measurements of the growth rate, R g, and the surface hydrogen coverage, θ H, of the gas-source-molecular-beam-epitaxy-grown Si(100) surface using disilane have been conducted to obtain the reaction order m of the adsorption process. The data points separated into three regions: region (I) for 1-θ Hm=0.5, region (II) for 0.5 H0.75 ML with m=4, which was successfully interpreted by a hydrogen-coverage- and temperature-dependent adsorption kinetics model.Keywords
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