Electro-optic measurement of GaAs switch voltage during optically activated avalanche
- 1 May 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (5) , 655-660
- https://doi.org/10.1109/16.285012
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Time-dependent model of an optically triggered GaAs switchJournal of Applied Physics, 1993
- DYNAMIC OPTICAL PROBING OF HIGH-POWER PHOTOCONDUCTORSPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993
- Effects of doping on photoconductive switches as determined by electro-optic imagingPublished by SPIE-Intl Soc Optical Eng ,1992
- Rise time and recovery of GaAs photoconductive semiconductor switchesPublished by SPIE-Intl Soc Optical Eng ,1991
- Optical probing of field dependent effects in GaAs photoconductive switchesPublished by SPIE-Intl Soc Optical Eng ,1991
- Modeling GaAs high-voltage, subnanosecond photoconductive switches in one spatial dimensionIEEE Transactions on Electron Devices, 1990
- The recovery behavior of semi-insulating GaAs in electron-beam-controlled switchesIEEE Transactions on Electron Devices, 1990
- Photoconductive semiconductor switch experiments for pulsed power applicationsIEEE Transactions on Electron Devices, 1990
- Impulse response of photoconductors in transmission linesIEEE Journal of Quantum Electronics, 1983
- Optical absorption and photoluminescence studies of thin GaAs layers in GaAs–AlxGa1−xAs double heterostructuresJournal of Applied Physics, 1974