Basic studies of gallium nitride growth on sapphire by metalorganic chemical vapor deposition and optical properties of deposited layers
- 1 November 1995
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 24 (11) , 1531-1534
- https://doi.org/10.1007/bf02676806
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- High-brightness InGaN/AlGaN double-heterostructure blue-green-light-emitting diodesJournal of Applied Physics, 1994
- Comparison of Hydride Vapor Phase Epitaxy of GaN Layers on Cubic GaN/(100)GaAs and Hexagonal GaN/(111)GaAs SubstratesJapanese Journal of Applied Physics, 1994
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994
- GaN On 6H-SiC – Structural And Optical PropertiesMRS Proceedings, 1994
- Surface morphology of MOVPE-grown GaN on (0001) sapphireJournal of Crystal Growth, 1993
- Growth of GaN and AlGaN for UV/blue p-n junction diodesJournal of Crystal Growth, 1993
- The growth and characterization of GaN on sapphire and siliconJournal of Electronic Materials, 1992
- Growth Characterization of Low-Temperature MOCVD GaN–Comparison between N2H4 and NH3–Japanese Journal of Applied Physics, 1987
- Absorption, Reflectance, and Luminescence of GaN Epitaxial LayersPhysical Review B, 1971
- Donor-acceptor pair recombination in GaNSolid State Communications, 1971