Comparison of Hydride Vapor Phase Epitaxy of GaN Layers on Cubic GaN/(100)GaAs and Hexagonal GaN/(111)GaAs Substrates
- 1 December 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (12R)
- https://doi.org/10.1143/jjap.33.6448
Abstract
No abstract availableKeywords
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