A lucky drift model, including a soft threshold energy, for the relation between gate and substrate currents in MOSFETs
- 30 November 1989
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 32 (11) , 935-946
- https://doi.org/10.1016/0038-1101(89)90154-8
Abstract
No abstract availableKeywords
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