Tunneling in MIS structures—II: Experimental results on MSiO2Si
- 31 December 1967
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 10 (12) , 1187-1198
- https://doi.org/10.1016/0038-1101(67)90060-3
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- MOS STUDY OF INTERFACE-STATE TIME CONSTANT DISPERSIONApplied Physics Letters, 1967
- Automatic Plotting of Conductance and Capacitance of Metal-Insulator-Semiconductor Diodes or Any Two Terminal Complex AdmittanceReview of Scientific Instruments, 1966
- Tunneling in the metal-insulator-semiconductor structure—I. Silicon-silicon dioxide, II. Thin film Al Al2O3-CdS and Al-Al2O3-CdSeIEEE Transactions on Electron Devices, 1966
- MOS CONDUCTANCE TECHNIQUE FOR MEASURING SURFACE STATE PARAMETERSApplied Physics Letters, 1965
- Tunneling from Metal to SemiconductorsPhysical Review B, 1965
- Lateral AC current flow model for metal-insulator-semiconductor capacitorsIEEE Transactions on Electron Devices, 1965
- Frequency response of the surface inversion layer in siliconProceedings of the IEEE, 1964
- Determination of the Properties of Films on Silicon by the Method of EllipsometryJournal of the Optical Society of America, 1962