HOT ELECTRON EMISSION FROM SILICON INTO SILICON DIOXIDE BY SURFACE AVALANCHE
- 1 December 1969
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 15 (11) , 364-365
- https://doi.org/10.1063/1.1652861
Abstract
Measurement of the MOS capacitance versus voltage by a fast voltage ramp has shown the avalanche effect in silicon surfaces. When avalanche occurred, emission of electrons into silicon dioxide and trapping effects were made possible.Keywords
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