The characterization of indium desorbed Si surfaces for low temperature surface cleaning in Si molecular beam epitaxy
- 1 September 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (5) , 1854-1859
- https://doi.org/10.1063/1.336014
Abstract
To investigate the feasibility of using indium to replace Ga as an agent for silicon surface cleaning at lower substrate temperature in ultrahigh vacuum, we have examined the in-diffusion of indium and the surface defects introduced into silicon for various indium desorption processes. TEM, SEM, AES, SIMS, EDAX, and DLTS, as well as spreading resistance measurements, were used to characterize the samples. For the dynamic desorption case, which simulated the actual cleaning procedure, no significant surface defects were identified, nor was there any indium in the near surface region of the silicon substrate.This publication has 6 references indexed in Scilit:
- Deep level transient spectroscopy studies of trapping parameters for centers in indium-doped siliconJournal of Applied Physics, 1981
- Crystal Defects of Silicon Films Formed by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1980
- Reduction of oxides on silicon by heating in a gallium molecular beam at 800 °Ca)Applied Physics Letters, 1980
- Silicon molecular beam epitaxy with simultaneous ion implant dopingJournal of Applied Physics, 1980
- Preparation of atomically clean silicon surfaces by pulsed laser irradiationApplied Physics Letters, 1980
- Dependence of residual damage on temperature during Ar+ sputter cleaning of siliconJournal of Applied Physics, 1977