A simple and efficient microwave launcher for plasma production
- 1 March 1992
- journal article
- Published by IOP Publishing in Plasma Sources Science and Technology
- Vol. 1 (1) , 13-17
- https://doi.org/10.1088/0963-0252/1/1/003
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- A 915 MHz/2.45 GHz ECR plasma source for large area ion beam and plasma processingReview of Scientific Instruments, 1990
- Electron Temperature Measurement Using Intensity Ratio of H2 Fulcher α(d3Πu-a3Σg) to Hα Emissions in a Weakly Ionized PlasmaJapanese Journal of Applied Physics, 1988
- An electron cyclotron resonance plasma deposition technique employing magnetron mode sputteringJournal of Vacuum Science & Technology A, 1988
- Microwave multipolar plasmas excited by distributed electron cyclotron resonance: Concept and performanceReview of Scientific Instruments, 1988
- Low-temperature reactive ion etching and microwave plasma etching of siliconApplied Physics Letters, 1988
- 30-cm electron cyclotron plasma generatorJournal of Spacecraft and Rockets, 1987
- Radio-frequency biased microwave plasma etching technique: A method to increase SiO2 etch rateJournal of Vacuum Science & Technology B, 1985
- Electron Cyclotron Resonance Plasma Deposition Technique Using Raw Material Supply by SputteringJapanese Journal of Applied Physics, 1984
- Low Temperature Chemical Vapor Deposition Method Utilizing an Electron Cyclotron Resonance PlasmaJapanese Journal of Applied Physics, 1983