Gettering of stacking-fault nuclei in silicon by trichloroethylene oxidation
- 1 April 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (7) , 312-314
- https://doi.org/10.1063/1.89404
Abstract
Stacking‐fault nuclei in silicon wafers are gettered by the incorporation of appropriate amounts of trichloroethylene (TCE) during thermal oxidation at high temperatures. Deliberate introduction of the TCE oxidation prevents the formation of oxidation‐induced stacking faults during the subsequent standard thermal oxidation. Possible mechanisms for the nuclei gettering and the fault suppression are discussed.Keywords
This publication has 15 references indexed in Scilit:
- Elimination of Stacking Faults in Silicon by Trichloroethylene OxidationJournal of the Electrochemical Society, 1976
- Elimination of Process‐Induced Stacking Faults by Preoxidation Gettering of Si Wafers: II . ProcessJournal of the Electrochemical Society, 1976
- Evaluation of dark-current nonuniformity in a charge-coupled deviceApplied Physics Letters, 1976
- Elimination of Oxidation‐Induced Stacking Faults by Preoxidation Gettering of Silicon Wafers: I . Phosphorus Diffusion‐Induced Misfit DislocationsJournal of the Electrochemical Society, 1975
- Anomalous temperature effect of oxidation stacking faults in siliconApplied Physics Letters, 1975
- Elimination of Stacking Faults in Silicon Wafers by HCl Added Dry O2OxidationJapanese Journal of Applied Physics, 1975
- Silicon Wafer Annealing Effect in Loop Defect GenerationJapanese Journal of Applied Physics, 1974
- Oxidation-induced stacking faults in silicon. II. Electrical effects in P N diodesJournal of Applied Physics, 1974
- Diffraction contrast analysis of two-dimensional defects present in silicon after annealingPhilosophical Magazine, 1966
- Surface Damage and Copper Precipitation in SiliconPhysica Status Solidi (b), 1963