Photoluminescence properties of cubic GaN grown on GaAs(100) substrates by metalorganic vapor phase epitaxy
- 13 October 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (15) , 2067-2069
- https://doi.org/10.1063/1.119344
Abstract
Photoluminescence (PL) measurements were performed on cubic GaN films grown on GaAs(100) substrates by metalorganic vapor phase epitaxy. The cubic GaN films show a high optical quality that enables us to study the PL spectra in detail. From temperature and excitation intensity dependence, the emission lines at 3.274 and at 3.178 eV were assigned to the excitonic transition and the donor–acceptor pair transition, respectively. We also observed two additional emission lines at 3.088 and 3.056 eV. An excitonic emission at 3.216 eV with full width half maximum value as small as 73 meV was observed at 300 K.Keywords
This publication has 13 references indexed in Scilit:
- Crystal Structure of GaN Grown on 3C-SiC Substrates by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1997
- The near band edge photoluminescence of cubic GaN epilayersApplied Physics Letters, 1997
- Optical transitions in cubic GaN investigated by spatially resolved cathodoluminescenceApplied Physics Letters, 1996
- Identification of optical transitions in cubic and hexagonal GaN by spatially resolved cathodoluminescencePhysical Review B, 1996
- Low pressure metalorganic chemical-vapor deposition of cubic GaN over (100) GaAs substratesApplied Physics Letters, 1994
- Temperature-dependent optical band gap of the metastable zinc-blende structure β-GaNPhysical Review B, 1994
- Optical properties near the band gap on hexagonal and cubic GaNApplied Physics Letters, 1994
- Growth of zinc blende-GaN on β-SiC coated (001) Si by molecular beam epitaxy using a radio frequency plasma discharge, nitrogen free-radical sourceJournal of Applied Physics, 1993
- An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Hot electron microwave conductivity of wide bandgap semiconductorsSolid-State Electronics, 1976