Effects of deep imperfection levels on the capacitance of semiconductor detectors

This publication has 18 references indexed in Scilit:

• Radiation damage in silicon microstrip detectors
  Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1988
• A silicon strip vertex detector for the Mark II experiment at the SLAC linear collider
  Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1988
• Investigation of deep impurities in schottky diodes on high-resistivity silicon
  Physica Status Solidi (a), 1988
• Silicon detectors in electromagnetic and hadronic calorimetry
  Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1988
• Silicon Radiation Detectors with Oxide Charge State Compensation
  IEEE Transactions on Nuclear Science, 1987
• General considerations for interpreting junction capacitance in complex systems
  Solid-State Electronics, 1986
• Interpretation of capacitance versus voltage measurements in the presence of a high density of deep levels
  Journal of Applied Physics, 1986
• The effect of radiation on ion-implanted silicon detectors
  Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1986
• Theory of concentration profiling technique for semiconductors with many deep levels
  Solid-State Electronics, 1982
• Frequency dependence of C and ΔV/Δ(C−2) of Schottky barriers containing deep impurities
  Solid-State Electronics, 1973