Silicon Radiation Detectors with Oxide Charge State Compensation
- 1 January 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 34 (1) , 396-400
- https://doi.org/10.1109/tns.1987.4337370
Abstract
This paper discusses the use of boron implantation on high resistivity P type silicon before oxide growth to compensate for the presence of charge states in the oxide and oxide/silicon interface. The presence of these charge states on high resistivity P type silicon produces an inversion layer which causes high leakage currents on N+P junctions and high surface conductance. Compensating the surface region by boron implantation is shown to result in oxide passivated N+P junctions with very low leakage currents and with low surface conductance.Keywords
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