Rate constants for light-enhanced thermal oxidation of silicon
- 1 September 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (5) , 2086-2094
- https://doi.org/10.1063/1.339526
Abstract
In response to a 1-W (56.6 W cm−2) laser beam stimulation at 5145 A, oxidation enhancement is found to occur and data are given for Si(111) and Si(100) from 900 to 750 °C. Using a heat transfer calculation, the thermal contribution and the nonthermal or optical contribution to the total enhancement have been separated. Analysis of the data in terms of linear and parabolic rate constants shows that the major effect resides in B rather than in B/A, with differences existing between the (111) and (100) orientations. A theoretical explanation is suggested to account for this behavior.This publication has 12 references indexed in Scilit:
- Ultraviolet light stimulated thermal oxidation of siliconApplied Physics Letters, 1987
- Electron population factor in light enhanced oxidation of siliconApplied Physics Letters, 1987
- Si/SiO2 interface roughness: Structural observations and electrical consequencesApplied Physics Letters, 1985
- On the Kinetics of the Thermal Oxidation of Silicon: IV . The Two‐Layer Film ApproximationJournal of the Electrochemical Society, 1983
- Photon enhanced oxidation of siliconApplied Physics Letters, 1983
- A Viscous Flow Model to Explain the Appearance of High Density Thermal SiO2 at Low Oxidation TemperaturesJournal of the Electrochemical Society, 1982
- Macroscopic theory of pulsed-laser annealing. I. Thermal transport and meltingPhysical Review B, 1981
- On the Kinetics of the Thermal Oxidation of Silicon: II . Some Theoretical EvaluationsJournal of the Electrochemical Society, 1980
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965
- Optical Constants of Silicon in the Region 1 to 10 evPhysical Review B, 1960