Generalized semiconductor Bloch equations: Local fields and transient gratings
- 15 November 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 44 (20) , 11253-11259
- https://doi.org/10.1103/physrevb.44.11253
Abstract
Equations of motion for two-point equal-time electronic correlation functions, which describe near-resonant optical excitation of semiconductors in the Hartree approximation, are derived. These equations generalize the common semiconductor Bloch equations to incorporate inhomogeneous excitation of the medium and strong dielectric effects. We show that the many-body effects on the optical nonlinearity cannot be fully included by simply replacing the external electric field by the local field.Keywords
This publication has 31 references indexed in Scilit:
- Line shape of time-resolved four-wave mixingPhysical Review A, 1990
- Effects of coherent polarization interactions on time-resolved degenerate four-wave mixingPhysical Review Letters, 1990
- Polaritons and retarded interactions in nonlinear optical susceptibilitiesThe Journal of Chemical Physics, 1989
- Linear and nonlinear optical properties of semiconductor quantum wellsAdvances in Physics, 1989
- Dynamics and Fourier transform studies of the excitonic optical Stark effectIEEE Journal of Quantum Electronics, 1989
- Dynamics of the Optical Stark Effect in SemiconductorsJournal of Modern Optics, 1988
- Third-order optical nonlinearities in semiconductor microstructuresPhysical Review B, 1988
- Phonon-Mediated Optical Nonlinearity in PolydiacetylenePhysical Review Letters, 1988
- "Dressed Excitons" in a Multiple-Quantum-Well Structure: Evidence for an Optical Stark Effect with Femtosecond Response TimePhysical Review Letters, 1986
- Observation of the Resonant Optical Stark Effect in a SemiconductorPhysical Review Letters, 1985