X-ray photoelectron spectroscopy damage characterization of reactively ion etched InP in CH4–H2 plasmas
- 1 July 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (4) , 1823-1832
- https://doi.org/10.1116/1.590213
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Etch product identification during - RIE of InP using mass spectrometryPlasma Sources Science and Technology, 1997
- Surface modification and etch product detection during reactive ion etching of InP in - plasmaPlasma Sources Science and Technology, 1997
- Mass spectrometry detection of radicals in SiH4-CH4-H2glow discharge plasmasPlasma Sources Science and Technology, 1995
- Fabrication of InGaAs/InP avalanche photodiodes by reactive ion etching using CH4/H2 gasesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Identification of volatile products in low pressure hydrocarbon electron cyclotron resonance reactive ion etching of InP and GaAsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Selective etching of InP and InGaAsP over AlInAs using CH4/H2 reactive ion etchingApplied Physics Letters, 1993
- A Kinetic Study of Reactive Ion Etching of Tungsten in SF 6 / O 2 RF PlasmasJournal of the Electrochemical Society, 1993
- Fabrication of Submicron Gratings for 1.5 μm InGaAsP / InP Distributed Feedback Lasers by Reactive Ion Etching Using C 2 H 6 / H 2Journal of the Electrochemical Society, 1992
- High-Resolution X-Ray Photoemission Spectrum of the Valence Bands of GoldPhysical Review B, 1972
- An Algorithm for Least-Squares Estimation of Nonlinear ParametersJournal of the Society for Industrial and Applied Mathematics, 1963