DLTS study of nucleation stage of oxygen precipitate in silicon
- 1 October 1998
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 253 (1-2) , 123-130
- https://doi.org/10.1016/s0921-4526(98)00371-8
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Diffusion limited oxygen precipitation in silicon: Precipitate growth kinetics and phase formationJournal of Applied Physics, 1995
- Oxygen precipitation in siliconJournal of Applied Physics, 1995
- Erratum: ‘‘A theoretical study on the critical radius of precipitates and its application to silicon oxide in silicon’’ [J. Appl. Phys. 62, 3960 (1987)]Journal of Applied Physics, 1992
- Formation of clusters in gold doped siliconPhysica Status Solidi (a), 1989
- Time-lag in nucleation of oxide precipitates in silicon due to high temperature preannealingJournal of Crystal Growth, 1987
- Oxygen precipitation retardation and recovery phenomena in Czochralski silicon: Experimental observations, nuclei dissolution model, and relevancy with nucleation issuesJournal of Applied Physics, 1986
- Oxygen Precipitation in SiliconMRS Proceedings, 1985
- Electron Energy Loss Microspectroscopy: Small Particles in SiliconMRS Proceedings, 1985
- Carbon-oxygen complexes as nuclei for the precipitation of oxygen in Czochralski siliconApplied Physics Letters, 1982
- The influence of thermal point defects on the precipitation of oxygen in dislocation-free silicon crystalsApplied Physics Letters, 1981