Growth of InAsSb alloy and InAsSb/GaSb superlattice lattice matched to (100) GaSb by molecular-beam epitaxy
- 1 July 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (1) , 205-207
- https://doi.org/10.1063/1.337682
Abstract
The growth conditions to achieve high-quality InAsSb alloy and abrupt InAsSb/GaSb heterostructure by molecular-beam epitaxy are described. The present results indicate that optical pyrometry is a reliable method to determine the growth temperature, and a stable substrate temperature is of critical importance in achieving homogeneous InAsSb composition throughout the growth period. The quality of these epilayers is evaluated by double x-ray diffraction measurement, reflection high-energy electron diffraction study, Nomarsky microscopy, and low-temperature photoluminescence. The optical quality is further demonstrated by the optically pumped coherent emission at ∼3.9 μm observed from an InAsSb active layer.This publication has 12 references indexed in Scilit:
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