Diffusion of boron and arsenic implants in 〈111〉 and 〈100〉 Si during rapid thermal annealing
- 1 March 1985
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 7-8, 329-333
- https://doi.org/10.1016/0168-583x(85)90575-0
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
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- Transient enhanced diffusion in arsenic-implanted short time annealed siliconApplied Physics Letters, 1984
- Regrowth behavior of ion-implanted amorphous layers on 〈111〉 siliconApplied Physics Letters, 1976
- The Distribution of Solute in Crystals Grown from the Melt. Part I. TheoreticalThe Journal of Chemical Physics, 1953