Carrier mobility in polycrystalline silicon under solar illumination
- 15 October 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (8) , 2375-2378
- https://doi.org/10.1063/1.334255
Abstract
A new model for the carrier mobility in polycrystalline silicon under solar illumination is presented. The dependence of mobility on temperature and grain size is also investigated theoretically. It is found that at low temperatures or for small grain sizes, the mobility is controlled by the grain-boundary scattering effect. Excellent agreement is observed between theoretical predictions and available experimental data.This publication has 17 references indexed in Scilit:
- Spectral response of photoconductivity in polycrystalline semiconductorsSolid-State Electronics, 1982
- Determination of the grain boundary recombination velocity in polycrystalline silicon as a function of illumination from photoconductance measurementsSolid-State Electronics, 1982
- Modeling and optimization of monolithic polycrystalline silicon resistorsIEEE Transactions on Electron Devices, 1981
- Grain boundary recombination: Theory and experiment in siliconJournal of Applied Physics, 1981
- The photoconductivity of polycrystalline semiconductorsJournal of Applied Physics, 1981
- On the mobility of polycrystalline semiconductorsSolid-State Electronics, 1980
- Hall mobility of polycrystalline siliconApplied Physics Letters, 1980
- Theory of the electrical and photovoltaic properties of polycrystalline siliconJournal of Applied Physics, 1980
- Transport properties of polycrystalline silicon filmsJournal of Applied Physics, 1978
- The electrical properties of polycrystalline silicon filmsJournal of Applied Physics, 1975