Spectral response of photoconductivity in polycrystalline semiconductors
- 30 June 1982
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 25 (6) , 505-510
- https://doi.org/10.1016/0038-1101(82)90165-4
Abstract
No abstract availableKeywords
This publication has 48 references indexed in Scilit:
- Concerning the dependence of photoconductivity on photogeneration rate in intrinsic amorphous semiconductorsSolar Energy Materials, 1982
- Effects of grain boundaries in polycrystalline solar cellsApplied Physics Letters, 1980
- The effects of grain boundary and interface recombination on the performance of thin-film solar cellsSolid-State Electronics, 1978
- Transport properties of polycrystalline silicon filmsJournal of Applied Physics, 1978
- Photocurrent loss within the depletion region of polycrystalline solar cellsSolid-State Electronics, 1978
- Conduction properties of lightly doped, polycrystalline siliconSolid-State Electronics, 1978
- Electrical Properties of n‐Type Polycrystalline Indium Phosphide FilmsJournal of the Electrochemical Society, 1977
- A quasi-equilibrium thermally stimulated current processSolid-State Electronics, 1977
- Electrical characteristics of boron diffused polycrystalline silicon layersSolid-State Electronics, 1975
- Electronic properties of undoped polycrystalline siliconSolid-State Electronics, 1974