Growth of cubic III-nitrides by gas source MBE using atomic nitrogen plasma: GaN, AlGaN and AlN
- 1 June 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 189-190, 390-394
- https://doi.org/10.1016/s0022-0248(98)00321-2
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Growth and characterization of cubic GaNJournal of Crystal Growth, 1997
- Bandgap energy of cubic GaNSolid-State Electronics, 1997
- Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layersApplied Physics Letters, 1996
- Surface Reconstructions and III-V Stoichiometry: The Case of Cubic and Hexagonal GaNMRS Proceedings, 1996
- First-principles calculations of effective-mass parameters of AlN and GaNPhysical Review B, 1995
- Temperature-dependent optical band gap of the metastable zinc-blende structure β-GaNPhysical Review B, 1994
- Epitaxial growth of cubic and hexagonal GaN by gas source molecular beam epitaxy using a microwave plasma nitrogen sourceJournal of Crystal Growth, 1994
- Quasiparticle band structure of AlN and GaNPhysical Review B, 1993
- Epitaxial growth of cubic and hexagonal GaN on GaAs by gas-source molecular-beam epitaxyApplied Physics Letters, 1991
- Properties of AlxGa1−xN films prepared by reactive molecular beam epitaxyJournal of Applied Physics, 1982