Luminescence characteristics of the 1.4 eV silicon related complex in gallium arsenide
- 28 February 1983
- journal article
- Published by Elsevier in Physica B+C
- Vol. 116 (1-3) , 414-419
- https://doi.org/10.1016/0378-4363(83)90283-8
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Stoichiometric disturbances in ion implanted GaAs and redistribution of Cr during annealingApplied Physics Letters, 1981
- Optical and electrical properties of disordered layers in GaAs crystals produced by Si+-ion implantationNuclear Instruments and Methods, 1981
- Photoluminescence of thermally treated n+ Si-doped and semi-insulating Cr-doped GaAs substratesJournal of Luminescence, 1981
- Radiative transitions induced in gallium arsenide by modest heat treatmentJournal of Applied Physics, 1980
- Photoluminescence of thermally treated n-type Si-doped GaAsJournal of Applied Physics, 1978
- Arsenic Vacancy Formation in GaAs Annealed in Hydrogen Gas FlowJapanese Journal of Applied Physics, 1977
- Photoluminescence studies of vacancies and vacancy-impurity complexes in annealed GaAsJournal of Luminescence, 1975
- Electrical and cathodoluminescence measurements on ion implanted donor layers in GaAsSolid-State Electronics, 1975
- Electrical and Optical Properties of n-Type Si-Compensated GaAs Prepared by Liquid-Phase EpitaxyJournal of Applied Physics, 1969
- Luminescence in Silicon-Doped GaAs Grown by Liquid-Phase EpitaxyJournal of Applied Physics, 1968