Test fixture for MESFET reliability life tests
- 1 January 1987
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 27 (5) , 897-911
- https://doi.org/10.1016/0026-2714(87)90337-4
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Electromigration effects in power MESFET rectifying and ohmic contactsElectronics Letters, 1987
- Gold-based gate-sinking enhanced by inhomogeneities in power MESFETsElectronics Letters, 1987
- Gate metallization "Sinking" into the active channel in Ti/W/Au metallized power MESFET'sIEEE Electron Device Letters, 1986
- Power GaAs MESFET: Reliability aspects and failure mechanismsMicroelectronics Reliability, 1984