Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films
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- 2 July 2007
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 91 (1) , 012907
- https://doi.org/10.1063/1.2749846
Abstract
The filamentary resistance switching mechanism of a Pt ∕ 40 nm Ti O 2 ∕ Pt capacitor structure in voltage sweep mode was investigated. It was unambiguously found that the conducting filaments propagate from the cathode interface and that the resistance switching is induced by the rupture and recovery of the filaments in the localized region ( 3 – 10 nm thick) near the anode. The electrical conduction behavior in the high resistance state was well explained by the space charge limited current (SCLC) mechanism that occurs in the filament-free region. The various parameters extracted from the SCLC fitting supported the localized rupture and formation of filaments near the anode.Keywords
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