Reduced temperature sensitivity AlxGa1−xAs-GaAs quantum well lasers with (Si2)x(GaAs)1−x ‘‘barriers’’
- 28 April 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (17) , 1156-1158
- https://doi.org/10.1063/1.96455
Abstract
The temperature dependence of threshold current of quantum well heterostructure (QWH) laser diodes is reduced by inserting (Si2)x(GaAs)1−x barriers in the active region. Alloy clustering of the (Si2)x(GaAs)1−x barriers, grown by metalorganic chemical vapor deposition, leads to further QW carrier localization and an increase in T0 in the usual expression Jth=J0 exp(T/T0) for the threshold current. Values as high as T0=250–275 °C have been measured.Keywords
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