Visualizing Interfacial Structure at Non-Common-Atom Heterojunctions with Cross-Sectional Scanning Tunneling Microscopy
- 2 October 2000
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 85 (14) , 2953-2956
- https://doi.org/10.1103/physrevlett.85.2953
Abstract
We describe how cross-sectional scanning tunneling microscopy (STM) may be used to image the interfacial bonding across the nearly lattice-matched, non-common-atom GaSb/InAs heterojunction with atomic-scale precision. The method, which takes advantage of the length difference between interfacial and bulk bonds, appears equally applicable to AlSb/InAs and suggests how one might recover the complete structure of either heterojunction from atomic-resolution STM data.Keywords
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