Inelastic electron-electron scattering in silicon (100) inversion layers

In a weakly disordered system where $\frac{\mathrm{kT}{\tau }_e}{\hslash }\sim 1$, we find experimentally that the electron inelastic scattering rate deduced from the magnetoconductance measurement is separable into a $T^2$ term and a $T$ term, which agree with the theoretical calculations on the electron-electron interaction in the ordered and diffusive limits. Since the scattering process formulated in the diffusive limit is momentum nonconserving, it affects conductivity directly. This idea is supported by the data published earlier by Cham and Wheeler.