Consideration of Band Bending and Reduced Optical Transmittance at Grain Boundaries in LBIC Analysis
- 1 October 1999
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 175 (2) , 561-567
- https://doi.org/10.1002/(sici)1521-396x(199910)175:2<561::aid-pssa561>3.0.co;2-n
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Depth profiling of the minority-carrier diffusion length in intrinsically gettered silicon by electron-beam-induced currentJournal of Applied Physics, 1988
- Charge collection in a Schottky diode as a mixed boundary-value problemSolid-State Electronics, 1985
- Light-beam-induced current characterization of grain boundariesJournal of Applied Physics, 1984
- Boundary conditions at grain boundariesJournal of Applied Physics, 1983
- Theory of beam induced current characterization of grain boundaries in polycrystalline solar cellsJournal of Applied Physics, 1983
- Determination of surface recombination velocity at a grain boundary using electron-beam-induced currentJournal of Applied Physics, 1983
- The importance of the excitation volume in determination of surface recombination velocityIEEE Transactions on Electron Devices, 1982
- On the analysis of diffusion length measurements by SEMSolid-State Electronics, 1982
- Effects of grain boundaries in polycrystalline solar cellsApplied Physics Letters, 1980
- Injected Current Carrier Transport in a Semi-Infinite Semiconductor and the Determination of Lifetimes and Surface Recombination VelocitiesJournal of Applied Physics, 1955