Investigation of low temperature (LT) layers of GaAs grown by MBE: comparison of MESFET and HEMT performance
- 2 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4) , 76-80
- https://doi.org/10.1016/0022-0248(93)90581-g
Abstract
No abstract availableKeywords
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