Surface Modification of Zinc Oxide Nanoparticles Influences the Electronic Memory Effects in ZnO−Polystyrene Diodes
- 23 June 2007
- journal article
- editorial
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry C
- Vol. 111 (28) , 10150-10153
- https://doi.org/10.1021/jp072999j
Abstract
No abstract availableKeywords
This publication has 33 references indexed in Scilit:
- Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxideApplied Physics Letters, 2006
- Electrical observations of filamentary conductions for the resistive memory switching in NiO filmsApplied Physics Letters, 2006
- Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3Nature Materials, 2006
- Nonvolatile Memory with Multilevel Switching: A Basic ModelPhysical Review Letters, 2004
- Field-driven hysteretic and reversible resistive switch at the Ag–Pr0.7Ca0.3MnO3 interfaceApplied Physics Letters, 2003
- The electroformed metal-insulator-metal structure: a comprehensive modelJournal of Physics D: Applied Physics, 2002
- Voltage-dependent dielectric breakdown and voltage-controlled negative resistance in anodized Al–Al2O3–Au diodesJournal of Applied Physics, 2000
- Reproducible switching effect in thin oxide films for memory applicationsApplied Physics Letters, 2000
- Bistable switching in electroformed metal–insulator–metal devicesPhysica Status Solidi (a), 1988
- Electrical phenomena in amorphous oxide filmsReports on Progress in Physics, 1970