GaAs IC's fabricated with the high-performance, high-yield multifunction self-aligned gate process for radar and EW applications
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 38 (9) , 1232-1241
- https://doi.org/10.1109/22.58648
Abstract
No abstract availableKeywords
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